The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 1984

Filed:

Apr. 06, 1983
Applicant:
Inventors:

Toshiaki Tamamura, Katsuta, JP;

Saburo Imamura, Mito, JP;

Masao Morita, Mito, JP;

Osamu Kogure, Mito, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ; B29C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156652 ; 156655 ; 1566591 ; 156904 ; 2041 / ; 252 791 ; 427 431 ; 430313 ; 430317 ;
Abstract

A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.


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