The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1983
Filed:
Jun. 03, 1980
Ichiro Imaizumi, Tokyo, JP;
Shikayuki Ochi, Akishima, JP;
Masatoshi Kimura, Hachioji, JP;
Masayoshi Yoshimura, Nishitama, JP;
Takashi Yamaguchi, Tachikawa, JP;
Toyomasa Koda, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.