The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 1983

Filed:

May. 26, 1981
Applicant:
Inventors:

Frank R Shepherd, Kanata, CA;

William D Westwood, Nepean, CA;

Assignee:

Northern Telecom Limited, Montreal, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357-4 ; 357 91 ;
Abstract

A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved.


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