The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1983
Filed:
Jun. 09, 1981
Applicant:
Inventor:
Andre Gauthier, Paris, FR;
Assignee:
Societe Anonyme de Telecommunications, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2502 / ; 250226 ; 357 16 ; 350-11 ;
Abstract
The photodetector comprises a silicon substrate with high sensitivity, a diffusion layer defining a PN junction, and a CdTe layer, as filter, placed on the face close to the PN junction, for stopping radiations of wave lengths shorter than 0.8 .mu.m. The photodetector is suitable for detecting radiations of AsGa diodes used in optical telecommunication systems.
Gauthier, Andre. (1983). Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m range (U.S. Patent No. 4420684). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4420684
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