The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1983
Filed:
Sep. 18, 1980
Albert Schmitz, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A Zener diode having a surface-adjoining first region of a first conductivity type, a second region of the second opposite conductivity type situated within the first region, and a third region of the first conductivity type which is situated at a distance from the surface and which is bounded entirely by the first and the second region and is more highly doped than the first region, the third region being overlapped by the second region on all sides. According to the invention the first region comprises an epitaxial layer which is provided on a more highly doped substrate. The third region is preferably bounded entirely by the second region and by the epitaxial layer. The structure according to the invention provides reproducible breakdown voltages even in the case of series production from semiconductor wafers having a diameter of 76 mm and larger.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile