The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1983
Filed:
Mar. 26, 1981
Judd R Murkland, Santa Clara, CA (US);
James S Congdon, Maynard, MA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A high current lateral transistor suitable for intergrated circuit construction is fabricated in the form of a plurality of parallel transistors. Each transistor has an emitter surrounded by a closely confronting collector with the intervening semiconductor acting as the base region. Groups of parallel connected transistors are located on both sides of and distributed along a centerline which contains a number of diffused crossunder resistor elements. Each group of transistors is flanked on both sides by a base contact that is extended perpendicularly away from the centerline and connected by metalization to a resistor element. The resistor elements act to distribute the transistor base currents in a ballasting operation that promotes proper current distribution. Since the resistors are under the oxide the emitter and collector metalization can pass across the centerline region and parallel connect the individual transistors.