The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 1983

Filed:

Dec. 15, 1980
Applicant:
Inventors:

Joseph R Monkowski, Bellefonte, PA (US);

Richard E Tressler, Julian, PA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B / ; C01B / ; C01B / ; C01G / ;
U.S. Cl.
CPC ...
423348 ; 156624 ; 423 87 ; 423299 ; 423508 ; 423509 ;
Abstract

A process for growing crystals of an inorganic material by forming a solution of the material in a solvent for the compound, forming a film of the solution and etching the solvent from the film with an etching gas until crystals of the material form. The solution has a solidification temperature lower than the melting or sublimation temperature of the material and higher than the condensation temperatures of the etching gas and of reaction products formed by the etching. The etching temperature is between the solidification temperature of the solution and the melting or sublimation temperature of the material and is lower than the vaporization temperature of the solvent and solution and higher than the condensation temperatures of the etching gas and reaction products.


Find Patent Forward Citations

Loading…