The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1983
Filed:
Apr. 17, 1981
Applicant:
Inventor:
Yukio Igarashi, Yokohama, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 86 ; 357 68 ;
Abstract
A semiconductor device having a semiconductor body including an anode layer, a first and second base layer, a cathode layer formed on the second base layer and an auxiliary region formed on the second base layer apart from the cathode layer. The semiconductor body has a peripheral zone, a gate peripheral zone, a corridor and an enlarged corridor, the corridor and the enlarged corridor being between a cathode electrode and an auxiliary electrode in contact with the auxiliary region. The width of the gate peripheral zone is larger than that of the peripheral zone and the width of the enlarged corridor is larger than that of the corridor.