The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1983
Filed:
Dec. 09, 1982
Samuel E Blum, White Plains, NY (US);
Karen H Brown, Yorktown Heights, NY (US);
Rangaswamy Srinivasan, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A technique is described for the fabrication of devices and circuits using multiple layers of materials, where patterned layers of resists are required to make the device or circuit. The fabrication process is characterized by the selective removal of portions of the resist layer by ablative photodecomposition. This decomposition is caused by the incidence of ultraviolet radiation of wavelengths less than 220 nm, and power densities sufficient to cause fragmentation of resist polymer chains and the immediate escape of the fragmented portions from the resist layer. Energy fluences in excess of 10 mJ/cm.sup.2 /pulse are typically required. The deliverance of a large amount of energy in this wavelength range to the resist layer in a sufficiently short amount of time causes ablation of the polymer chain fragments. No subsequent development step is required for patterning the resist layer.