The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1983
Filed:
Aug. 20, 1981
Applicant:
Inventor:
Robert E Kvaas, Goleta, CA (US);
Assignee:
Santa Barbara Reserarch Center, Goleta, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
148-63 ; 427 82 ;
Abstract
A process is provided for forming the native oxide on a semiconductor surface comprising Hg.sub.1-x Cd.sub.x Te, where x ranges from 0 to 1. The process comprises exposing the semiconductor surfce to a mixture of ozone and oxygen containing an effective amount of ozone sufficient to form a native oxide thereon. The desired amount of ozone is conveniently obtained by passing oxygen from a source through an ozone generator provided with a source of high voltage.
Quick Actions:
Kvaas, Robert. (1983). Passivation of mercury cadmium telluride semiconductor surfaces by ozone (U.S. Patent No. 4414040). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4414040
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile