The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1983
Filed:
Jun. 21, 1979
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
4272552 ; 427255 ; 4272553 ; 4272557 ; 4274191 ; 4274192 ; 4274193 ; 4274197 ;
Abstract
A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.
Published as:
FI57975B; DK84680A; NO800555L; AU5578680A; EP0015390A1; JPS55130896A; BR8001087A; PL222293A1; FI57975C; ZA80852B; IL59393A; US4413022A; HU181779B; IN152596B; AU535151B2; SU1085510A3; CA1166937A; MX151518A; JPS6021955B2; EP0015390B1; ATE15820T1; DE3071110D1; PL138247B1; NO155106B; NO155106C; DK157943B; DK157943C;