The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1983
Filed:
Dec. 23, 1981
Applicant:
Inventors:
Dale M Brown, Schenectady, NY (US);
Kirby G Vosburgh, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 2957 / ; 2957 / ; 2957 / ; 29578 ; 148175 ; 357 42 ; 357 49 ; 357 50 ;
Abstract
A method of making an integrated circuit is described. The method includes providing a substrate of single crystal silicon semiconductor material having low minority carrier lifetime, forming an insulating layer of silicon dioxide overlying a major surface of the substrate, forming a plurality of apertures in the insulating layer which expose a plurality of selected portions of the major surface of the substrate, and epitaxially growing a layer of silicon on each of the selected portions of the major surfaces of the substrate.