The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Jun. 19, 1980
Manfred Mauthe, Munich, DE;
Hans-Jorg Pfleiderer, Zorneding, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
An integrated rectifier circuit has a doped semiconductor body having first and second oppositely doped regions therein and is covered by an electrically insulating layer on which a first pair of input gate electrodes are disposed which are associated with the first oppositely doped region and on which a second pair of input gate electrodes are disposed associated with the second oppositely doped region. The oppositely doped regions are connected to a clock pulse voltage and all of the input gate electrodes are connected to a constant voltage having a magnitude such that a uniform surface potential exists in the semiconductor regions covered by the electrodes. The input gate electrode of the first pair which is disposed at a greater distance from the first oppositely doped region and the input gate electrode of the second pair which is disposed closer to the second oppositely doped region are charged with the alternating voltage component of an input signal. A charge transfer device transfer channel covered with transfer electrodes is connected to the semiconductor regions covered by the input electrodes and a charge transfer device output stage couples an output signal to external circuitry in which the alternating voltage component is rectified.