The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Sep. 26, 1980
Junji Komeno, Fujisawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
In the vapor phase epitaxy (VPE) method employed for growth of a compound semiconductor, a high resistivity GaAs buffer layer and a low resistivity GaAs active layer are successively grown on a GaAs substrate in a VPE reaction tube. A GaAs substrate having a crystallographic orientation different from that of the GaAs substrate is positioned just above and opposite to the GaAs substrate, thereby decreasing the epitaxial growth rate and impurities in the epitaxial buffer layer grown on the GaAs substrate. To grow the low resistivity active layer, the dummy substrate is moved away from the GaAs substrate downstream from the gas flow direction. This method provides for a low impurity concentration in the buffer layer and a steep doping distribution between the grown epitaxial layers. Advantageously, the yield of the VPE method is enhanced and the noise figure of FETs produced by this VPE method is decreased.