The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Mar. 30, 1981
Tsunenori Sakamoto, Ibaragi, JP;
Agency of Industrial Science & Technology, Tokyo, JP;
Ministry of International Trade & Industry, Tokyo, JP;
Abstract
In the manufacture of a superlattice by the MBE method, growth of an epitaxial film on a growth substrate is accomplished by disposing a P-type and an N-type impurity evaporation source at positions adjacent to a main evaporation source and symmetrical to each other relative to the main evaporation source and causing the molecular beams issuing from these evaporation sources to be projected through a mask onto the growth substrate. When the apparatus used for the aforementioned growth of the epitaxial film is additionally provided with a shutter adapted to open and close at least one of the impurity evaporation sources, the projections of the molecular beams can be controlled so as to produce an interdigital periodic structure element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile