The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Aug. 31, 1981
John Y Chen, Los Angeles, CA (US);
Hughes Aircraft Company, El Segundo, CA (US);
Abstract
An improved process is provided for fabricating CMOS (Complementary Metal Oxide Semiconductor) devices formed on a semiconductor substrate having n-channel and p-channel regions of n- and p-type conductivity, respectively. Conventional source, drain and gate portions are formed in the regions and electrical contacts are made thereto. The improvement comprises providing self-aligned channel stops between regions of the same conductivity and between regions of the opposite conductivity. The channel stops between regions of the opposite conductivity are mutually self-aligned. The self-alignment is achieved by use of a single mask, called a 'complementary' mask. The process of the invention permits fabrication of submicrometer devices.