The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1983
Filed:
Sep. 16, 1981
Applicant:
Inventors:
Assignee:
Kokusai Denshin Denwa Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 357 17 ; 357 61 ;
Abstract
A semiconductor laser having a multi-layer film which is inclusive of an active layer and formed on an InP substrate, in which at least one layer adjacent to the active layer is formed of a material which is a composition having a larger band gap than InP and whose component ratio is so selected as to match with the lattice constant of InP, thereby to ensure that minority carriers injected into the active layer efficiently contribute to laser operation. The material has a composition including at least three elements in addition to InP.