The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 1983

Filed:

Apr. 17, 1981
Applicant:
Inventor:

Karl-Heinz Zschauer, Grafing, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 44 ; 357 17 ; 372 45 ;
Abstract

A multi-layer laser diode structure comprised of a semiconductor material, for example, gallium-aluminum-arsenide, having varying amounts of a dopant, such as aluminum, in the respective layers, includes a cover layer which is transparent to laser radiation and provided for total reflection of radiation generated in a laser-active layer positioned below the cover layer and an additional layer positioned on top of the cover layer and supporting a contact on its exterior surface. The additional layer is composed of a semiconductor material having a band gap which is greater by at least 2 kT relative to that of the material forming the laser-active layer. The exterior surface of the additional layer is substantially specularly smooth for radiation generated in the laser-active layer. Non-destructive testing of quality factors decisive for a completed laser diode can occur with this type of construction.


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