The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1983
Filed:
Oct. 02, 1981
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A method for fabricating a semiconductor device is disclosed which includes a step of forming contact holes in insulating films on a substrate, forming a silicate glass layer containing an impurity over the entire surface, and performing the phosphorus getter treatment using POCl.sub.3 at a high temperature. Even when the phosphorus getter treatment is performed after the formation of the contact holes, the substrate or electrodes exposed through the contact holes may not be reduced in thickness or damaged. The impurity may be diffused into the substrate from the silicate glass layer through the contact holes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile