The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1983
Filed:
Mar. 08, 1982
Applicant:
Inventors:
Takao Kawamura, Tsujino, Sakai-Shi, Osaka-Fu, JP;
Yoshida Masazumi, Amagasaki, JP;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05P / ;
U.S. Cl.
CPC ...
430 95 ; 427 74 ; 357-2 ; 2525011 ;
Abstract
A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.