The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 1983

Filed:

Aug. 19, 1982
Applicant:
Inventors:

Robert D Darnell, Phoenix, AZ (US);

William M Ingle, Phoenix, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423342 ; 423277 ; 423300 ; 423304 ; 423326 ; 423327 ; 423341 ;
Abstract

A process is disclosed for the purification of trichlorosilane and other silicon source materials. Trace impurities of boron and phosphorous are removed from trichlorosilane or dichlorosilane by reacting small amounts of oxygen with the trichlorosilane or dichlorosilane at a temperature between about 60.degree. C. and 300.degree. C. The oxygen reacts with the Si--H bond in HSiCl.sub.3 or H.sub.2 SiCl.sub.2 to form a 'SiOH' species which in turn complexes impurities such as BCl.sub.3 or PCl.sub.3 present in the chlorosilane. Purification of the chlorosilane is then easily accomplished during a subsequent distillation step which separates the purified chlorosilane from the less volatile complexed boron or phosphorous compounds.


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