The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1983
Filed:
Oct. 17, 1980
Addison B Jones, Yorba Linda, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A bubble domain device and the method of manufacturing microcircuits having multi-level conductor patterns, which includes forming on a substrate a horizontally extended first level conductor material pattern in pre-configured, relatively overwidth channels defined by a first insulator material layer on the substrate, depositing additional insulator material atop the first level conductor material, and the first insulator layer in channel backfilling relation. The additional insulator material defines a planar surface uniformly spaced above the substrate. The method then includes forming a second upper level conductor material pattern at least partially opposite the first level conductor material pattern and on the additional insulator material surface. The second upper level conductor material pattern being uniformly spaced relative to the substrate by the additional insulator material surface.