The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1983
Filed:
Dec. 29, 1981
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 86 ; 156603 ; 264 63 ; 427 74 ;
Abstract
A low porosity sintered polycrystalline silicon film is produced by grinding initial silicon material in a non-oxygen-containing liquid, such as decahydronaphthalene, to an average grain size corresponding to a specific surface of at least 50 m.sup.2 /g; thickening the so-attained grinding mass with a non-oxygen-containing material, such as polyisobutylene and/or polyethylene in a suitable solvent, so as to attain a viscosity in the resultant slip suitable for drawing a film from such slip, and drawing a film from such slip, optionally dividing the film into desired sized pieces, and sintering the resultant film or pieces.