The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1983
Filed:
Oct. 15, 1981
Applicant:
Inventors:
Theodore D Moustakas, Berkeley Heights, NJ (US);
Don L Morel, Woodland Hills, CA (US);
Benjamin Abeles, Princeton, NJ (US);
Assignee:
Exxon Research and Engineering Co., Florham Park, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
2041 / ; 136258 ; 2041 / ; 357-2 ; 357 30 ; 427 39 ; 427 74 ; 427 86 ;
Abstract
The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.