The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1983
Filed:
Aug. 20, 1981
Applicant:
Inventor:
Yoshitaka Sasaki, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2956 / ; 29578 ; 29591 ; 148187 ; 148188 ;
Abstract
Disclosed is a method of producing a semiconductor device, comprising forming an oxidation-resistive insulating film having one or more openings on a semiconductor substrate, forming an impurity-doped polysilicon pattern in at least the opening of the insulating film by using a mask substantially equal in size to the opening, forming a silicon oxide film on the exposed surface of the polysilicon pattern by thermal oxidation, removing the insulating film, and depositing a conductive material and, then, patterning said conductive material layer for forming an interconnection electrode layer insulated from the polysilicon pattern by the silicon oxide film.