The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 1983
Filed:
May. 22, 1981
Joseph J Fatula, Jr, Poughkeepsie, NY (US);
Paul L Garbarino, Ridgefield, CT (US);
Joseph F Shepard, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A dielectrically isolated region of a monocrystalline substrate, which has a <100> orientation, has a drain region of a field effect transistor (FET) in a surface having a (100) crystal orientation with the drain region being of opposite conductivity to the conductivity of the substrate. A gate channel extends into the substrate from the drain region and is surrounded at its upper end by the drain region. An enlarged recess extends into the substrate beneath the gate channel and has its walls of opposite conductivity to the conductivity of the substrate to form a source region and a plate of a capacitor when the FET is part of a storage cell. The source region has its upper end surrounded by the gate channel.