The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1983
Filed:
Aug. 11, 1980
International Business Machines Corporation, Armonk, NY (US);
Abstract
This invention relates to a field effect transistor level converter for converting bipolar transistor logic levels to field effect transistor logic levels. First and second field effect transistors have their source and gate electrodes connected in common. The bipolar input signal is received at the common source connection while the gate electrodes receive a fixed reference potential that is equal to the threshold voltage VT plus the lowest possible high binary level of the bipolar input logic. The drain electrode of the first field effect transistor is connected to the output terminal of the level converter and the source electrode of a source follower transistor. The drain electrode of the second transistor is connected to a load device and to the gate of the source follower transistor which has its drain electrode connected to VH. This arrangement produces at the first output terminal a potential swing of approximately 0 to 7 volts in response to an input signal in the range of 0.8 to 2.0 volts.