The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1983
Filed:
Dec. 16, 1980
Applicant:
Inventors:
Assignee:
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ; C01B / ;
U.S. Cl.
CPC ...
204164 ; 42218604 ; 423349 ; 427 93 ; 427124 ;
Abstract
A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.