The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1983
Filed:
Mar. 31, 1982
Applicant:
Inventors:
James K Liu, Glendale, CA (US);
Guenter H Schwuttke, Poughkeepsie, NY (US);
Krishna M Koliwad, La Canada, CA (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ; C30B / ;
U.S. Cl.
CPC ...
156608 ; 156D / ; 156D / ;
Abstract
A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e.g. oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900.degree. C.-1200.degree. C.