The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 1983

Filed:

Oct. 28, 1981
Applicant:
Inventor:

Lee N Davy, Rochester, NY (US);

Assignee:

Eastman Kodak Company, Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N / ; H04N / ;
U.S. Cl.
CPC ...
358163 ; 358213 ;
Abstract

Column defect compensating apparatus for a charge coupled device (CCD) image sensor of the type having a two-dimensional array comprising rows and columns of charge transfer elements, and an output CCD shift register arranged across one end of the columns includes an auxiliary shift register clocked in synchronism with the output shift register, and containing information representing the location of defective columns in the two-dimensional array. A signal processing circuit responsive to the output of the auxiliary shift register processes the output of the array to compensate for the column defects. In a preferred embodiment of the invention, the auxiliary shift register is a CCD shift register, and a plurality of programable input circuits are provided for inserting, in parallel, into the auxiliary CCD shift register, signals representing the condition of the columns of the array. The programable input circuits include input diodes disposed adjacent the cells of the auxiliary shift register for providing a source of signal charge, input gates disposed between the diodes and the respective cells of the auxiliary shift register for selectively isolating the diodes from the cells, and selectively destructible conductors for controlling the transfer of charge from the diodes past the input gates.


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