The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1983
Filed:
Dec. 31, 1980
Tatsumi Hiramoto, Himeji, JP;
Ushio Denki Kabushikikaisha, Tokyo, JP;
Abstract
A semiconductor is annealed by an equipment which comprises a short-arc type rare gas discharge lamp as a heat source possessing the condition, 140.gtoreq.P.times.l.gtoreq.16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25.degree. C.), an optical system for converging emitted light from the gas discharge lamp in the required manner, a power source unit capable of controlling the emitted light of the gas discharge lamp, and a stage for mounting the semiconductor. With this equipment, the semiconductor crystal is satisfactorily restored from damages incidental to ion implantation and a polycrystalline or amorphous semiconductor is converted into a good single crystal semiconductor.