The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1983
Filed:
Sep. 15, 1981
Applicant:
Inventors:
Masao Sugata, Kawasaki, JP;
Masaki Fukaya, Kawasaki, JP;
Takashi Nakagiri, Tokyo, JP;
Takaaki Yamagata, Yokohama, JP;
Yutaka Hirai, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
430 84 ; 430 95 ; 430133 ; 430 62 ;
Abstract
The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.
Sugata, Masao. (1983). Hydrogenated amorphous silicon photoconductive layer (U.S. Patent No. 4397933). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4397933
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile