The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1983
Filed:
Mar. 17, 1981
Applicant:
Inventor:
Christl Lauterbach, Ottobrunn, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 65 ; 357 68 ;
Abstract
A contact structure on indium-containing III-V semiconductor material is comprised of a four layer sequence consisting of an indium layer in direct contact with the semiconductor material, a zinc layer in contact with the indium layer, a chromium-nickel or chromium or palladium or platinum layer in contact with the zinc layer and a gold layer for external contacting with a lead. An exemplary embodiment of such contact structure exhibits specific contact resistance ranging between about 10.sup.-4 and 10.sup.-5 ohm.multidot. cm.sup.2.