The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1983
Filed:
Sep. 28, 1981
Keith H Nicholas, Reigate, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing an insulated gate field effect transistor includes the provision of a first masking layer on a semiconductor body followed by the introduction of a dopant characteristic of the conductivity type of the semiconductor body into unmasked areas to form a channel stopper. The unmasked areas are then oxidized to form an inset oxide layer. Subsequently, the masking layer is removed to expose a window in the oxide layer, and then a second masking layer is provided on the oxide layer. The second masking layer includes a second window extending into the first window so that the sides of the second window are situated within the first window. The sides of the second window determine the width of the channel region in a subsequent implantation of ions characteristic of the conductivity type of the channel region. Consequently, the channel region is spaced apart from the channel stoppers, and a very narrow channel region, for example 2 micrometers, is provided.