The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 1983

Filed:

Dec. 11, 1981
Applicant:
Inventor:

Kazuo Imai, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C25F / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 148-15 ; 148187 ; 357 91 ;
Abstract

In a semiconductor device of the type comprising a semiconductor substrate made of P type silicon, a P type monocrystalline silicon region formed on the major surface of the substrate and containing a P type impurity, and a porous silicon oxide region surrounding the P type silicon region, the porous silicon oxide region is made to contact all side surfaces of the P type silicon region and all or at least a portion of the bottom surface thereof.


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