The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1983
Filed:
Aug. 26, 1980
Kotaro Kato, Chofu, JP;
Tetsuma Sakurai, Hachioji, JP;
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Abstract
The semiconductor device is provided with semiconductor elements having the complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape. Surfaces of the frustum are inclined by an angle determined by semiconductor crystal structure. Side and bottom surfaces of the islands are formed adjacent to an insulating layer and both islands are supported part from the polycrystalline semiconductor layer. All side and bottom surfaces of the islands adjacent the insulating layer are made of high impurity substance of the same type as respective islands.