The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 1983

Filed:

Mar. 02, 1981
Applicant:
Inventors:

Soichiro Hayashi, Katsuta, JP;

Yoshihiko Suenaga, Katsuta, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2504911 ; 2504922 ;
Abstract

An electron beam pattern is formed on an object while correcting the deflection distortion of electron beam upon controlling the deflection of electron beam. Prior to pattern formation, reference marks provided on the object are scanned by electron beam to measure their positions, and a processing unit determines correction data for correcting the deflection distortion through interpolation on the basis of results by interpolation. Upon actual pattern formation, data necessary for forming a pattern is corrected by the correction data to be thus produced as a deflection signal for deflecting the electron beam. As a result, the deflection distortion can precisely be corrected for even though the physical performance of the deflector system is slightly poor.


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