The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1983
Filed:
Feb. 16, 1982
Alan Ritzer, City Sand Lake, NY (US);
Bakulesh Shah, Corpus Christi, TX (US);
Daniel E Sliva, Scotia, NY (US);
General Electric Company, Waterford, NY (US);
Abstract
Improved yields of monohydrogentrihalosilanes are achieved by contacting the residual silicon obtained from the preparation of organohalosilanes by a metal-catalyzed direct process by contacting the residual silicon simultaneously with gaseous hydrogen halide and with gaseous alkyl halide to form a residual silicon contact mass; selecting a temperature between about 200.degree. C. and about 350.degree. C. at which alkylation of the silicon contact mass in inhibited and at which hydrohalogenation of the silicon contact mass occurs; and heating the silicon contact mass at the selected temperature. The silicon reacts with the gaseous alkyl halide and the gaseous hydrogen halide at the selected temperature to produce improved yields of the monohydrogentrihalosilane. In preferred embodiments, monohydrogentrichlorosilane is produced by reacting residual silicon with hydrogen chloride and methyl chloride at a temperature less than the temperature at which a predominantly alkylation reaction occurs with the residual contact mass so that there is sufficient hydrohalogenation to form the monohydrogentrichlorosilane.