The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1983
Filed:
Dec. 16, 1980
Applicant:
Inventors:
Narasipur G Anantha, Hopewell Junction, NY (US);
Harsaran S Bhatia, Wappingers Falls, NY (US);
John S Lechaton, Wappingers Falls, NY (US);
James L Walsh, Hyde Park, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C03C / ;
U.S. Cl.
CPC ...
156646 ; 1566591 ; 1566611 ; 156662 ; 430313 ; 252 793 ;
Abstract
The present invention provides a method for planarizing a non-uniform thickness of oxide, for example silicon dioxide as is formed over oxide-filled trenches used in deep dielectric isolation in integrated circuits. The oxide is removed by a planarizing resist-etching process so that etching in thicker resist areas proceeds at a rate slower than etching in thinner resist areas. A referred etchant is HF gas and etching is preferably at an elevated temperature.