The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1983
Filed:
Jul. 15, 1981
Jan Bloem, Eindhoven, NL;
Cornelis H van den Brekel, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device in which a monocrystalline material is epitaxially grown on a disc-shaped monocrystalline substrate. The substrate is placed in an elongate reactor and a gas flow in the longitudinal direction is passed over the substrate while a temperature gradient is maintained in the gas flow. The gas flow initially contains the reaction components in equilibrium with the material to be grown, and the gas flow becomes supersaturated with respect to the material to be grown as the temperature gradient is traversed. If the temperature gradient is selected so that the gas flow becomes undersaturated with respect to the material to be grown, etching will take place.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile