The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 1983

Filed:

Sep. 08, 1981
Applicant:
Inventors:

Bulent M Basol, Los Angeles, CA (US);

Eric S Tseng, Los Angeles, CA (US);

Robert L Rod, Los Angeles, CA (US);

Assignee:

Monosolar, Inc., Santa Monica, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C25D / ; C25D / ;
U.S. Cl.
CPC ...
136260 ; 136264 ; 204 / ; 204 40 ; 148-15 ; 357 16 ; 357 30 ;
Abstract

A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.


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