The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 1983

Filed:

May. 14, 1981
Applicant:
Inventor:

Adam Heller, Bridgewater, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M / ; H01L / ;
U.S. Cl.
CPC ...
429111 ; 136255 ; 136262 ; 148 333 ; 2042 / ; 357 15 ; 357 30 ;
Abstract

Semiconductor devices comprising p-type phosphorus containing semiconductor materials chosen from InP, GaP and InGaAsP have chemically treated surfaces comprising a monolayer or less of a metal chosen from silver, ruthenium, gold, platinum, and rhodium. Photoelectrochemical electrodes and Schottky barrier photovoltaic cells made from such treated semiconductors have reduced surface or grain boundary carrier recombination.


Find Patent Forward Citations

Heller, Adam. (1983). Devices having chemically modified p-type inp surfaces (U.S. Patent No. 4388383). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4388383

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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