The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 1983
Filed:
Mar. 21, 1980
Applicant:
Inventor:
G R Rao, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ; G11C / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 2957 / ; 148187 ; 357 23 ; 357 91 ;
Abstract
A dynamic read/write memory cell of the one-transistor N-channel silicon gate type is made by a double-level polysilicon process in which the implant dosage is reduced for the channel stop regions beneath the field oxide. This causes the signal level on the bit lines to be improved, and also reduces leakage problems.