The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1983
Filed:
Jun. 16, 1981
Siegfried Leibenzeder, Erlangen, DE;
Christine Heindl, Mantel, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
The invention relates to a method and apparatus for manufacturing epitaxial Ga.sub.1-x Al.sub.x As:Si films via liquid-phase epitaxy, using a boat in a quartz tube. The Ga, which is contained in a graphite boat, open at the long side, is baked out first. The Ga-melt is allowed to run onto GaAs substrate wafers, on which Si is deposited, and to be drawn into the gap between the GaAs-substrate wafers and the plane graphite surfaces. The thin Ga-melt formed above the GaAs substrate wafers is then brought into contact with the melted Al and is allowed to cool. According to the method of the invention, luminescence diodes of the (Ga, Al) As type, the emission of which is in the wave range of 650 to 800 nm, can be constructed.