The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1983
Filed:
Jun. 19, 1981
Applicant:
Inventor:
Juey H Lai, Burnsville, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430269 ; 430312 ; 430313 ; 430296 ;
Abstract
A method of fabricating a negative electron resist pattern for microcircuit is disclosed which combines electron beam resist exposure with dry plasma etch developing. The technique utilizes a coating of a barrier polymer over the negative electron resist film prior to exposure to the electron beam film to prevent vacuum sublimation of the constituents of the negative electron resist film.
Lai, Juey. (1983). Plasma developable electron resist process (U.S. Patent No. 4386152). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4386152
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile