The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1983
Filed:
Oct. 29, 1980
Nobuo Suzuki, Kamakura, JP;
Tokyo Shibaura Electric Co., Ltd., Kawasaki, JP;
Abstract
A so-called buried channel type solid state image sensing device is formed with a channel layer of the opposite conductivity type in the surface of a semiconductor substrate. An insulating layer is formed on the surface of the semiconductor substrate and spaced apart photo-electrode and a charge transfer electrode are buried in the insulating film and a shift electrode is buried therebetween. A channel layer is provided beneath the photoelectrode and the charge transfer electrode whereas no channel layer is formed beneath the shift electrode. But instead a portion of the surface of the semiconductor substrate is located beneath the shift electrode. Since no channel layer is provided beneath the shift electrode, a sufficient quantity of charge carriers is accumulated in a potential well formed in the channel layer beneath the photoelectrode.