The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1983
Filed:
Jun. 15, 1981
Applicant:
Inventor:
Shing-Gong Liu, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 61 ; 357 63 ; 357 91 ;
Abstract
The electron mobility in an active layer on a semi-insulating substrate is enhanced by initially performing a high energy implantation of an element which is inert in the semi-insulating material. Donor ions are then implanted so as to form the active layer in that area of the substrate in which the high energy implantation was performed, and the substrate is annealed.
Liu, Shing-Gong. (1983). Method for enhancing electron mobility in gaas (U.S. Patent No. 4383869). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4383869
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile