The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1983
Filed:
Nov. 28, 1980
Peter E Cottrell, Essex Junction, VT (US);
Ronald R Troutman, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
This teaches that by measuring the rate of change in gate current of an insulating gate field effect transistor, under normal operating conditions, the time required to achieve a predetermined change in source-to-drain current in the transistor can be found. Because changes in gate current depends more on sensitivity on charge trapping in the oxide than do changes in channel current, and since the gate current occurs only in the small region of electron emission, the effects on gate current are more quickly developed than the secondary effect of reduced channel current due to the charge in gate oxide caused by the presence of trapped electrons.