The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 1983

Filed:

May. 27, 1980
Applicant:
Inventors:

Paul D Reynolds, Cardiff, CA (US);

Norman W Jones, Poway, CA (US);

Assignee:

Burroughs Corporation, Detroit, MI (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
156643 ; 29591 ; 156652 ; 156656 ; 156664 ; 156665 ; 357 71 ; 427 82 ; 427 89 ; 427399 ;
Abstract

Disclosed is a method of fabricating an electrical contact to a region which lies at the surface of a semiconductor substrate and is doped opposite thereto. The method includes the steps of forming the combination of a silicide of a noble metal at the surface of the region, a layer of a barrier metal over the silicide, and a patterned conductor on a portion of the barrier metal layer which partly covers the region; etching partway through the portion of the barrier metal which is not covered by the patterned conductor; and thereafter oxidizing to completion, the portion of the barrier metal layer which is not covered by the patterned conductor and which remains after the etching step.


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