The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1983
Filed:
Nov. 13, 1981
Applicant:
Inventors:
Robert C Frye, Piscataway, NJ (US);
Harry J Leamy, Summit, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 2957 / ; 2957 / ; 29578 ; 29580 ; 148-15 ; 148175 ; 156603 ; 156612 ; 156628 ; 204 / ; 2041291 ; 2041293 ; 357 49 ; 357 50 ; 357 55 ;
Abstract
Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.